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rev.1.00, oct.14. 2003, page 1 of 10 h7n0603dl, H7N0603DS silicon n channel mos fet high speed power switching rej03g0123-0100z rev.1.00 oct.14.2003 features ? low on - resistance r ds (on) = 11 m ? typ. ? low drive current ? capable of 4.5 gate drive outline 1. gate 2. drain 3. source 4. drain h7n0603dl dpak-2 1 2 3 4 dpak-s H7N0603DS 4 1 2 3 d g s
h7n0603dl, h7l0603ds rev.1.00, oct.14. 2003, page 2 of 10 absolute maximum ratings (ta = 25 c) item symbol ratings unit drain to source voltage v dss 60 v gate to source voltage v gss 20 v drain current i d 30 a drain peak current i d (pulse) note1 120 a body drain diode reverse drain current i dr 30 a avalanche current i ap note3 25 a avalanche energy e ar note3 53.6 mj channel dissipation pch note2 40 w channel temperature tch 150 c storage temperature tstg ?55 to +150 c notes: 1. pw 10 s, duty cycle 1% 2. tc = 25 c 3. tch = 25 c, rg 50 ?
h7n0603dl, h7l0603ds rev.1.00, oct.14. 2003, page 3 of 10 electrical characteristics (ta = 25 c) item symbol min typ max unit test condition drain to source breakdown voltage v (br)dss 60??v i d = 10 ma, v gs = 0 gate to source breakdown voltage v (br)gss 20??v i g = 100 a, v ds = 0 gate to source leak current i gss ?? 10 av gs = 16 v, v ds = 0 zero gate voltage drain current i dss ??10 av ds = 60 v, v gs = 0 gate to source cutoff voltage v gs(off) 1.5 ? 2.5 v i d = 1 ma, v ds = 10 v ? 1115m ? i d = 15 a, v gs = 10 v note1 static drain to source on state resistance r ds(on) ? 1622m ? i d = 15 a, v gs = 4.5 v note1 forward transfer capacitance |y fs |2440?s i d = 15 a, v ds = 10 v note1 input capacitance ciss ? 3200 ? pf output capacitance coss ? 385 ? pf reverse transfer capacitance crss ? 225 ? pf v ds = 10 v v gs = 0 f = 1 mhz total gate charge qg ? 56 ? nc gate to source charge qgs ? 11 ? nc gate to drain charge qgd ? 12 ? nc v dd = 25 v v gs = 10 v i d = 30 a turn-on delay time t d(on) ?30?ns rise time t r ? 125 ? ns turn-off delay time t d(off) ?90?ns fall time t f ?17?ns v gs = 10 v, i d = 15 a r l = 2.0 ? rg = 4.7 ? body - drain diode forward voltage v df ?0.9?v i f = 30 a, v gs = 0 note1 body ? drain diode reverse recovery time t rr ?30?nsi f = 30 a, v gs = 0 dif / dt = 100 a / s notes: 1. pulse test
h7n0603dl, h7l0603ds rev.1.00, oct.14. 2003, page 4 of 10 main characteristics channel dissipation pch (w) case temperature tc ( c) power vs. tmperature derating drain to source voltage v (v) ds drain current i d (a) maximum safe operation area gate to source voltage v gs (v) typical trasfer characteristics drain current i d (a) drain current i d (a) drain to source voltage v ds (v) typical output characterristics 50 40 30 20 0 50 100 150 200 50 40 30 20 10 0 246810 3.5 v 2.5 v 10 5.0 v 4.5 v 3 v 50 40 30 20 10 0 2468 10 150 c 25 c tc=?40 c v ds = 10 v pulse test pulse test v gs = 10 v 4.0 v 0.1 0.3 1 3 10 30 100 1000 300 100 30 10 3 1 0.1 0.03 0.01 0.3 ta = 25 c 10 s 100 s 1 ms pw = 10 ms (1 shot) dc operation (tc = 25?c) operation in this area is limited by r ds(on)
h7n0603dl, h7l0603ds rev.1.00, oct.14. 2003, page 5 of 10 0 48 12 16 20 500 400 300 200 100 pulse test i d = 20 a 10 a 5 a 13010 0 3 100 1 10 10 3 30 v gs = 4.5 v 10 v pulse test 0.0001 1 0.1 0.01 0.001 10 10 0.1 0.01 0.001 100 1 drain current i d (a) drain source on state resistance r ds(on) (m ? ) static drain to source state resistance vs. drain current case tem p erature tc ( ?c ) drain source on state resistance r ds(on) (m ? ) static drain to state resistance vs. temperature drain current i d (a) forward transfer admittance vs. drain current forward transfer admittance |yfs| (s) gate to source voltage v gs (v) drain source saturation voltage vs. gate to source voltage drain to source voltage v ds(on) (mv) 50 40 30 20 10 ?50 0 50 100 150 0 v gs = 10 v 4.5 v pulse test 5, 10, 20 a 5, 10, 20 a 100 tc = ?40 c 150 c 25 c v ds = 10 v pulse test
h7n0603dl, h7l0603ds rev.1.00, oct.14. 2003, page 6 of 10 1 0.1 0.3 3 10 30 100 01020304050 100 1000 300 100 80 60 40 20 0 20 16 12 8 4 20 40 60 80 100 0 1000 100 300 30 10 1 3 0.1 0.3 3 10 100 1000 100 300 30 3 10 1 30 30 1 10 v gs = 0 f = 1 mhz ciss coss crss i d = 30 a v gs v ds v gs = 10 v, v dd = 30 v pw = 5 s, duty < 1 % rg = 4.7 ? t r t r t d(on) t d(off) t f t f 3000 10000 reverse drain current i dr (a) reverse recovery time trr (ns) body-drain diode reverse recovery time capacitance c (pf) drain to source voltage v ds (v) typical capacitance vs. drain to source voltage reverse drain current qg (nc) drain to source voltage v ds (v) gate source voltage v gs (v) dynamic input characteristics switching time t (ns) drain current i d (a) switching characteristics di / dt = 100 a / s v gs = 0, ta = 25 c v dd = 50 v 25 v 10 v v dd = 50 v 25 v 10 v
h7n0603dl, h7l0603ds rev.1.00, oct.14. 2003, page 7 of 10 0 0.4 0.8 1.2 1.6 2.0 pulse test v gs = 0, ?5 v 10 v 5 v 50 40 30 20 10 d. u. t rg i monitor ap v monitor ds v dd 50 ? vin 15 v 0 i d v ds i ap v (br)dss l v dd e = l i 2 1 v v ? v ar ap dss dss dd 2 80 64 48 32 16 25 50 75 100 125 150 0 i ap = 30 a v dd = 25 v duty < 0.1 % rg > 50 ? source to drain voltage v sd (v) reverse drain current i dr (a) reverse drain current vs. source to drain voltage channel temperature tch ( c) repetitive avalanche energy e ar (mj) maximum avalanche energy vs. channel temperature derating avalanche test circuit avalanche waveform
h7n0603dl, h7l0603ds rev.1.00, oct.14. 2003, page 8 of 10 tr td(on) vin 90% 90% 10% 10% vout td(off) 90% 10% t f switching time test circuit switching time waveform pulse width pw (s) normalized transient thermal impedance s (t) normalized transient thermal impedance vs. pulse width 3 1 0.3 0.1 0.03 0.01 10 100 1 m 10 m 100 m 1 10 vin monitor d.u.t. vin 10 v r l v = 30 v ds vout monitor rg tc = 25 c d = 1 0.5 0.05 0.2 0.1 0.01 1shot 0.02 dm p pw t d = pw t ch - c(t) = s (t) ? ch - c ch - c = 3.125 c/ w, tc = 25 c
h7n0603dl, h7l0603ds rev.1.00, oct.14. 2003, page 9 of 10 package dimensions ? h7n0603dl package code jedec jeita mass (reference value) dpak (l)-(2) ? ? 0.42 g 6.5 0.5 2.3 0.2 0.55 0.1 1.2 0.3 0.55 0.1 5.5 0.5 1.7 0.5 16.2 0.5 4.7 0.5 5.4 0.5 1.15 0.1 2.29 0.5 2.29 0.5 0.8 0.1 0.55 0.1 3.1 0.5 (0.7) as of january, 2003 unit: mm
h7n0603dl, h7l0603ds rev.1.00, oct.14. 2003, page 10 of 10 ? H7N0603DS package code jedec jeita mass (reference value) dpak (s) ? conforms 0.28 g as of january, 2003 unit: mm 6.5 0.5 5.4 0.5 2.3 0.2 0.55 0.1 0 ? 0.25 0.55 0.1 1.5 0.5 5.5 0.5 2.5 0.5 (1.2) 0.8 0.1 2.29 0.5 2.29 0.5 1.2 max (5.1) (5.1) 1.0 max. (0.1) (0.1)
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